Silicon carbide (SiC) is a promising semiconductor material for power electronic devices, but it suffers from bipolar degradation, which severely limits its lifespan. To address this long-standing ...

Stacking faults in β-NaMnO 2 severely reduce their capacity during charging/discharging cycles. Copper doping effectively eliminates stacking faults, significantly improving cycling stability, ...

Stacking faults in β-NaMnO 2 severely reduce their capacity during charging/discharging cycles. Copper doping effectively eliminates stacking faults, significantly improving cycling stability, ...

Silicon carbide (SiC) is a crystalline material utilized to develop a wide array of electronic devices, including transistors and other high-power, high-frequency, and high-temperature devices. As ...