In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results ...

Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...

(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...

An extensive range of insulating thin films are utilized in modern VLSI circuits providing electrical isolation between conducting regions within a device and as a final capping passivation layer.

Silicon nitride (Si3N4) etching is a critical process step in the fabrication of three-dimensional NAND flash memories, where vertically stacked layers demand exceptional process precision. The ...

A new approach combining atomic layer deposition and organic film etch process may solve critical challenges in the various processes in advanced nodes. We demonstrated a high selective and ...