Infineon Technologies AG is exhibiting its semiconductor, software and tooling solutions, meeting green and digital transformation challenges, at PCIM Europe 2024. The company will demonstrate its ...

Infineon Technologies AG rolled out its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year’s European Microwave Week. As part of Infineon’s ...

(RTTNews) - German semiconductor maker Infineon Technologies AG (IFNNY) announced Wednesday the development of the world's first 300 mm power gallium nitride or GaN wafer technology. The ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN-based ...

Infineon Technologies has agreed to buy rival GaN Systems for $830 million, in a bid to bolster its presence in a new class of power electronics shaking up markets where silicon has dominated for ...

Power devices continue to evolve rapidly as SiC and GaN technologies become more highly integrated, easy to use, and cost-effective. Meanwhile, steady improvements in MOSFET structures and processes ...

Infineon has announced the launch of two Euopean Union-wide three-year research projects dedicated to gallium nitride (GaN) integration and AI application. The first project, known as ALL2GaN ...

Silicon carbide (SiC) and gallium nitride (GaN) power semiconductors are projected to hit record growth levels, spurred on by the latest applications for power ICs, particularly those in battery ...

MUNICH, Dec. 3, 2025 /PRNewswire/ -- The U.S. International Trade Commission (ITC) found the violation of one patent owned by Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) concerning gallium ...

No two technologies have generated more buzz in power semiconductors in recent years than GaN (Gallium Nitride) and SiC (Silicon Carbide). Both these wide band-gap (WBG) semiconductors offer several ...