HRL Laboratories–an R&D venture between Boeing and General Motors–has launched a new foundry service for use in advanced millimeter-wave (mmWave) gallium-nitride (GaN) technology applications. HRL’s ...

Cambridge GaN Devices (CGD) is to lead a €10.3m project to develop intelligent GaN power modules. Called GaNext, and part of the Penta programme, its partners include academic and commercial ...

Imec, the research and innovation hub for nanoelectronics and digital technologies, has launched a new 300mm GaN programme that aims to develop advanced power devices. 300mm GaN-on-Si wafer Credit: ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel is launching a new, ruggedized 100V/90A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems.

Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design with ...

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Wolfspeed CGHV40100 GaN-on-Silicon HEMT: Chip and Module Fabrication Process Overview" report to their offering.

A 650-V GaN intelligent power module (IPM) from TI enables up to 99% inverter efficiency for major home appliances and HVAC systems. The DRV7308 IPM integrates 650-V, 205-mΩ e-mode GaN FETs in a half ...

IRVINE, Calif. , June 16 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC) announced the addition of two new gallium nitride (GaN) semiconductor High Electron Mobility Transistors ...

Silicon MOSFET power transistors have been a mainstay of power-supply design for years. And while they’re still widely used, gallium-nitride (GaN) transistors are gradually replacing MOSFETs in some ...

Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode ...