TOKYO — Toshiba Corp. said it is leveraging its deep-trench-capacitor DRAM structure, which it has championed as a process driver since the 0.25-micron generation, to migrate its system-on-chip ...
The high density metal-insulator-metal capacitor process provides capacitance values of 4, 6, 8, and 10fF/um(2). This process replaces the industry standard silicon nitride insulator layer with a high ...
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